S29GL128P11FFIV23

S29GL128P11FFIV23图片1
S29GL128P11FFIV23概述

IC FLASH MEM 128Mbit PAGE 64BGA

FLASH - NOR 存储器 IC 128Mb(16M x 8) 并联 110 ns 64-FBGA(13x11)


立创商城:
S29GL128P11FFIV23


得捷:
IC FLASH 128MBIT PARALLEL 64FBGA


艾睿:
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R


安富利:
The Spansion S29GL128P is Mirrorbit® Flash product fabricated on 90 nm process technology. This device offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.


Win Source:
IC FLASH MEM 128MBIT PAGE 64BGA


S29GL128P11FFIV23中文资料参数规格
技术参数

位数 8, 16

存取时间Max 110 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

引脚数 64

封装 BGA

外形尺寸

封装 BGA

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead free

数据手册

在线购买S29GL128P11FFIV23
型号: S29GL128P11FFIV23
描述:IC FLASH MEM 128Mbit PAGE 64BGA
替代型号S29GL128P11FFIV23
型号/品牌 代替类型 替代型号对比

S29GL128P11FFIV23

Cypress Semiconductor 赛普拉斯

当前型号

当前型号

S29GL128P11FFIV22

赛普拉斯

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S29GL128P11FAIR23

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