TIP101G

ON SEMICONDUCTOR  TIP101G  达林顿双极晶体管

Designed for general−purpose amplifier and low−speed switching applications.

Features

•High DC Current Gain −hFE = 2500 Typ @ IC= 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

                VCEOsus= 60 Vdc Min − TIP100, TIP105

                             = 80 Vdc Min − TIP101, TIP106

                             = 100 Vdc Min − TIP102, TIP107

•Low Collector−Emitter Saturation Voltage − VCEsat= 2.0 Vdc Max @ IC

                                                         = 3.0 Adc

                                                       = 2.5 Vdc Max @ IC= 8.0 Adc

•Monolithic Construction with Built−in Base−Emitter Shunt Resistors

•Pb−Free Packages are Available