FAIRCHILD SEMICONDUCTOR TIP107 单晶体管 双极, 达林顿, PNP, -100 V, 80 W, -8 A, 200 hFE
The is a -100V PNP epitaxial silicon Darlington Transistor for industrial use. It features monolithic construction with built in base-emitter shunt resistors. This product is general usage and suitable for many different applications. The transistor is complementary to TIP100/101/102.
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- High DC current gain hFE=1000 at VCE= -4V, IC = -3A minimum
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- Low collector-emitter saturation voltage
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- -100V Collector base voltage VCBO
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- -5V Emitter base voltage VEBO
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- -1A Base current IB
额定电压DC -100 V
额定电流 -8.00 A
针脚数 3
极性 PNP
耗散功率 80 W
击穿电压集电极-发射极 100 V
最小电流放大倍数hFE 1000 @3A, 4V
额定功率Max 2 W
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
高度 9.4 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TIP107 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
TIP107TU 飞兆/仙童 | 类似代替 | TIP107和TIP107TU的区别 |