









VISHAY VS-CPV364M4KPBF 绝缘金属物质功率模块
The is a short-circuit rated ultrafast IGBT Module optimized for high speed and short-circuit rated to 10µs at 125°C, VGE = 15V. The IGBT technology is the key to Vishay"s Semiconductors advanced line of IMS insulated metal substrate power modules. This module is more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.
针脚数 13
极性 N-Channel
耗散功率 63 W
击穿电压集电极-发射极 600 V
输入电容Cies 1.6nF @30V
额定功率Max 63 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 63000 mW
安装方式 Through Hole
引脚数 13
封装 IMS-2-13
长度 62.43 mm
宽度 7.87 mm
高度 21.97 mm
封装 IMS-2-13
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Bulk
制造应用 Power Management, Industrial, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VS-CPV364M4KPBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
VS-CPV363M4KPBF 威世 | 功能相似 | VS-CPV364M4KPBF和VS-CPV363M4KPBF的区别 |