VRF141

射频功率MOSFET垂直 RF POWER VERTICAL MOSFET

The is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

FEATURES

• Improved Ruggedness VBRDSS = 80 V

• 150W with 22dB Typical Gain @ 30MHz, 28V

• 150W with 13dB Typical Gain @ 175MHz, 28V

• Excellent Stability & Low IMD

• Common Source Configuration

• Available in Matched Pairs

• 30:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• High Voltage Replacement for MRF141

• RoHS Compliant