VNB20N0713TR

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VNB20N0713TR概述

STMICROELECTRONICS VNB20N0713TR MOSFET Transistor, N Channel, 20A, 70V, 0.05Ω, 10V, 800mV

Look no further than STMicroelectronics" low side power switch, a useful tool used for safely dealing with high-end frequencies. This charge controller has single output. This device has a maximum power dissipation of 83000 mW. It features 0.07Max Ohm switch on resistance. This charge controller has an input voltage of 18Max V. Its maximum power dissipation is 83000 mW. This device has a supply current of 0.25 mA and a minimum output current of 14 A. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery.

VNB20N0713TR中文资料参数规格
技术参数

额定电压DC 70.0 V

额定电流 20.0 A

输出接口数 1

通道数 1

漏源极电阻 0.05 Ω

极性 N-Channel

耗散功率 83 W

阈值电压 800 mV

漏源极电压Vds 70 V

漏源击穿电压 70 V

连续漏极电流Ids 20.0 A

上升时间 240 ns

输出电流Max 14 A

下降时间 150 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

其他

产品生命周期 Active

包装方式 Cut Tape CT

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买VNB20N0713TR
型号: VNB20N0713TR
描述:STMICROELECTRONICS VNB20N0713TR MOSFET Transistor, N Channel, 20A, 70V, 0.05Ω, 10V, 800mV
替代型号VNB20N0713TR
型号/品牌 代替类型 替代型号对比

VNB20N0713TR

ST Microelectronics 意法半导体

当前型号

当前型号

VNB20N07TR-E

意法半导体

类似代替

VNB20N0713TR和VNB20N07TR-E的区别

VNB20N07

意法半导体

类似代替

VNB20N0713TR和VNB20N07的区别

BTS133TC

英飞凌

功能相似

VNB20N0713TR和BTS133TC的区别

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