SOT-89P-CH 30V 1.1A
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by Technology. Its maximum power dissipation is 1600 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
额定功率 1.6 W
极性 P-CH
耗散功率 1.6 W
漏源极电压Vds 30 V
连续漏极电流Ids 1.1A
输入电容Ciss 300pF @25VVds
额定功率Max 1.6 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-89-3
封装 SOT-89-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VP3203N8-G Microchip 微芯 | 当前型号 | 当前型号 |
TN2504N8-G 微芯 | 类似代替 | VP3203N8-G和TN2504N8-G的区别 |