X28HC256DI-90

X28HC256DI-90概述

5伏,可变的字节EEPROM 5 Volt, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with ’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory

Features

• Access time: 70ns

• Simple byte and page write

   - Single 5V supply

   - No external high voltages or VP-P control circuits

   - Self-timed

   - No erase before write

   - No complex programming algorithms

   - No overerase problem

• Low power CMOS

   - Active: 60mA

   - Standby: 500µA

• Software data protection

   - Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

   - Endurance: 1,000,000 cycles

   - Data retention: 100 years

• Early end of write detection

   - DATA polling

   - Toggle bit polling

• Pb-free plus anneal available RoHS compliant

X28HC256DI-90中文资料参数规格
技术参数

电源电压DC 5.00 V, 5.50 V max

时钟频率 90.0 GHz

存取时间 90.0 ns

内存容量 256000 B

存取时间Max 90 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

安装方式 Through Hole

引脚数 28

封装 DIP

外形尺寸

封装 DIP

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买X28HC256DI-90
型号: X28HC256DI-90
制造商: Intersil 英特矽尔
描述:5伏,可变的字节EEPROM 5 Volt, Byte Alterable EEPROM

锐单商城 - 一站式电子元器件采购平台