ZXTP2012ZTA

双极晶体管 - 双极结型晶体管BJT

双极 - 双极结型晶体管BJT

立创商城:
PNP 60V 4.3A

得捷:
TRANS PNP 60V 4.3A SOT89-3

贸泽:
双极晶体管 - 双极结型晶体管BJT 60V PNP Low Sat

e络盟:
单晶体管 双极, PNP, -80 V, 120 MHz, 1.5 W, -4.3 A, 250 hFE

艾睿:
The versatility of this PNP ZXTP2012ZTA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.

Allied Electronics:
Transistor PNP 60V 4.3A SOT89

安富利:
Trans GP BJT PNP 60V 4.3A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT PNP 60V 4.3A 2100mW Automotive 4-Pin3+Tab SOT-89 T/R

TME:
Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89

Verical:
Trans GP BJT PNP 60V 4.3A Automotive 4-Pin3+Tab SOT-89 T/R

Newark:
# DIODES INC.  ZXTP2012ZTA  Bipolar BJT Single Transistor, PNP, -80 V, 120 MHz, 1.5 W, -4.3 A, 250 hFE

儒卓力:
**PNP TRANSISTOR 60V 4,3A SOT89 **

Win Source:
TRANS PNP 60V 4.3A SOT89