DIODES INC. ZXTN25100DFHTA 单晶体管 双极, NPN, 100 V, 175 MHz, 1.25 W, 2.5 A, 450 hFE
Jump-start your electronic circuit design with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
频率 175 MHz
针脚数 3
极性 NPN
耗散功率 1.25 W
增益频宽积 175 MHz
击穿电压集电极-发射极 100 V
集电极最大允许电流 2.5A
最小电流放大倍数hFE 300 @10mA, 2V
最大电流放大倍数hFE 300 @10mA, 2V
额定功率Max 1.25 W
直流电流增益hFE 450
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1810 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.05 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电机驱动与控制, 工业, 计算机和计算机周边, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
