Trans GP BJT NPN 20V 6A 4460mW Automotive 4Pin3+Tab SOT-89 T/R
If your circuit"s specifications require a device that can handle high levels of voltage, Zetex"s NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 215 MHz
极性 NPN
耗散功率 4.46 W
击穿电压集电极-发射极 20 V
集电极最大允许电流 6A
最小电流放大倍数hFE 300 @10mA, 2V
最大电流放大倍数hFE 300
额定功率Max 2.4 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 4460 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
