ZVP4424GTA 编带
As an alternative to traditional transistors, the power MOSFET from Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
额定电压DC -240 V
额定电流 -1.00 A
通道数 1
漏源极电阻 9 Ω
极性 P-Channel
耗散功率 2.5 W
输入电容 100 pF
漏源极电压Vds 240 V
漏源击穿电压 240 V
栅源击穿电压 ±40.0 V
连续漏极电流Ids 480 mA
上升时间 8 ns
输入电容Ciss 200pF @25VVds
额定功率Max 2.5 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZVP4424GTA Diodes 美台 | 当前型号 | 当前型号 |
ZVP4424G 美台 | 功能相似 | ZVP4424GTA和ZVP4424G的区别 |
ZVP4424GTC 美台 | 功能相似 | ZVP4424GTA和ZVP4424GTC的区别 |