1N6373RL4G

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1N6373RL4G概述

ON SEMICONDUCTOR  1N6373RL4G.  二极管, TVS, 1.5KW, 5V, 41A, 整卷

Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.

1N6373RL4G中文资料参数规格
技术参数

额定电压DC 6.00 V

额定功率 1.50 kW

击穿电压 6 V

电路数 1

针脚数 2

钳位电压 9.4 V

最大反向电压(Vrrm) 5V

测试电流 1 mA

最大反向击穿电压 6 V

脉冲峰值功率 1500 W

最小反向击穿电压 6 V

击穿电压 6 V

工作温度Max 175 ℃

工作温度Min -65 ℃

工作结温 -65℃ ~ 175℃

封装参数

安装方式 Through Hole

引脚数 2

封装 DO-201AD

外形尺寸

长度 9.5 mm

直径 5.30 mm

封装 DO-201AD

物理参数

工作温度 -65℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Power Management, Consumer Electronics, Industrial, 通用, Medical, Automation & Process Control, Communications & Networking, Computers & Computer Peripherals

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买1N6373RL4G
型号: 1N6373RL4G
制造商: ON Semiconductor 安森美
描述:ON SEMICONDUCTOR  1N6373RL4G.  二极管, TVS, 1.5KW, 5V, 41A, 整卷
替代型号1N6373RL4G
型号/品牌 代替类型 替代型号对比

1N6373RL4G

ON Semiconductor 安森美

当前型号

当前型号

1N6373G

安森美

完全替代

1N6373RL4G和1N6373G的区别

SA6.0AG

安森美

类似代替

1N6373RL4G和SA6.0AG的区别

1N6373RL4

安森美

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1N6373RL4G和1N6373RL4的区别

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