ON SEMICONDUCTOR 1N6376G TVS二极管, TVS, MOSORB系列, 单向, 12 V, 21.2 V, 轴向引线, 2 引脚
Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
额定电压DC 14.1 V
额定电流 125 A
额定功率 1.50 kW
无卤素状态 Halogen Free
击穿电压 14.1 V
电路数 1
针脚数 2
耗散功率 1500 W
钳位电压 21.2 V
最大反向电压(Vrrm) 12V
测试电流 1 mA
最大反向击穿电压 14.1 V
脉冲峰值功率 1500 W
最小反向击穿电压 14.1 V
击穿电压 14.1 V
工作温度Max 175 ℃
工作温度Min -65 ℃
安装方式 Through Hole
引脚数 2
封装 DO-201AD
长度 9.5 mm
直径 5.30 mm
封装 DO-201AD
工作温度 -65℃ ~ 175℃
产品生命周期 Active
包装方式 Each
制造应用 通用, Consumer Electronics, Power Management, Communications & Networking, Automation & Process Control, Computers & Computer Peripherals, Medical, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
1N6376G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPTE-12RL4G 安森美 | 完全替代 | 1N6376G和MPTE-12RL4G的区别 |
1N6376RL4 安森美 | 完全替代 | 1N6376G和1N6376RL4的区别 |
1N6376RL4G 安森美 | 类似代替 | 1N6376G和1N6376RL4G的区别 |