ON SEMICONDUCTOR 1N6291AG 齐纳二极管
Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
无卤素状态 Halogen Free
击穿电压 64.6 V
电路数 1
针脚数 2
耗散功率 1500 W
钳位电压 92 V
最大反向电压(Vrrm) 58.1V
测试电流 1 mA
最大反向击穿电压 71.4 V
脉冲峰值功率 1500 W
最小反向击穿电压 64.6 V
击穿电压 64.6 V
工作温度Max 175 ℃
工作温度Min -65 ℃
安装方式 Through Hole
引脚数 2
封装 DO-201AD
长度 9.5 mm
封装 DO-201AD
工作温度 -65℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Each
制造应用 通用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
1N6291AG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
1.5KE68ARL4G 安森美 | 完全替代 | 1N6291AG和1.5KE68ARL4G的区别 |
1N6291A 安森美 | 完全替代 | 1N6291AG和1N6291A的区别 |
1.5KE68A 安森美 | 完全替代 | 1N6291AG和1.5KE68A的区别 |