






SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
• 1N746A-1 THRU 1N759-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127
• 1N4370A-1 THRU 1N4372A-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
艾睿:
If you need a diode to operate in the reverse breakdown region then use a voltage regulator 1N751A-1 zener diode from Microsemi. Its maximum leakage current is 5 μA. Its test current is 20 mA. Its maximum power dissipation is 500 mW. This device has a maximum regulator current of 70 mA. This zener device has a nominal voltage of 5.1 V and a voltage tolerance of 5%. It is made in a single configuration. This zener diode has a minimum operating temperature of -65 °C and a maximum of 175 °C.
Verical:
Zener Diode Single 5.1V 5% 14Ohm 500mW 2-Pin DO-35 Bag
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
1N751A-1 Microsemi 美高森美 | 当前型号 | 当前型号 |
1N5231BDO35TR 美高森美 | 类似代替 | 1N751A-1和1N5231BDO35TR的区别 |
JANTX1N751A-1 M/A-Com | 类似代替 | 1N751A-1和JANTX1N751A-1的区别 |
1N4689DO35 美高森美 | 类似代替 | 1N751A-1和1N4689DO35的区别 |