1N649-1

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1N649-1概述

硅整流二极管 Silicon Rectifier Diodes

Use Advantages

Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. Military and Aero/Space. MIL-S- 19500/ 240 approvals. Available up to JANTXV-1 level. "S" level screening capability to Source Control Drawings.

Features

● Six Sigma quality

● Humidity proof glass

● Metallurgically bonded

● Thermally matched system

● No thermal fatigue

● High surge capability

● Sigma Bond™ plated contacts

● 100% guaranteed solderability

● DO-213AA SMD MELF commercial LL and MIL UR-1 types available

1N649-1中文资料参数规格
技术参数

正向电压 1V @400mA

耗散功率 1500 mW

测试电流 45 mA

正向电流 400 mA

稳压值 5.6 V

正向电压Max 1V @400mA

正向电流Max 400 mA

工作温度Max 175 ℃

工作温度Min -65 ℃

耗散功率Max 500 mW

封装参数

安装方式 Through Hole

引脚数 2

封装 DO-35

外形尺寸

封装 DO-35

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买1N649-1
型号: 1N649-1
描述:硅整流二极管 Silicon Rectifier Diodes
替代型号1N649-1
型号/品牌 代替类型 替代型号对比

1N649-1

Microsemi 美高森美

当前型号

当前型号

JANTXV1N649-1

美高森美

完全替代

1N649-1和JANTXV1N649-1的区别

JAN1N649-1

美高森美

类似代替

1N649-1和JAN1N649-1的区别

JANTX1N649-1

美高森美

类似代替

1N649-1和JANTX1N649-1的区别

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