1N5806US

1N5806US图片1
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1N5806US概述

军事批准的高效率2.5安培和6.0 AMP MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

DESCRIPTION

This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. They are also available in surface-mount packages see separate data sheet for 1N5802US thru . also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in both through-hole and surface-mount packages.

FEATURES

• Popular JEDEC registered 1N5802 to 1N5806 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/477

• Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix see separate data sheet for 1N5802US thru 1N5806US

1N5806US中文资料参数规格
技术参数

正向电压 875mV @1A

热阻 13 ℃/W

反向恢复时间 25 ns

正向电流 2500 mA

正向电压Max 875mV @1A

正向电流Max 2500 mA

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 A-MELF

外形尺寸

封装 A-MELF

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

军工级 Yes

海关信息

ECCN代码 EAR99

数据手册

在线购买1N5806US
型号: 1N5806US
描述:军事批准的高效率2.5安培和6.0 AMP MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
替代型号1N5806US
型号/品牌 代替类型 替代型号对比

1N5806US

Microsemi 美高森美

当前型号

当前型号

1N5806USE3

美高森美

类似代替

1N5806US和1N5806USE3的区别

1N5806U01A

意法半导体

功能相似

1N5806US和1N5806U01A的区别

1N5806U02A

意法半导体

功能相似

1N5806US和1N5806U02A的区别

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