1N5809

1N5809 100 V 3 A 轴向 无空隙 密封 超快恢复 整流器

FEATURES:

·  Chip Outline Dimensions: 68 x 68 mils

·  Chip Thickness: 8 to 12 mils

·  Anode Metallization: Aluminum

·  Metallization Thickness: 70,000ÃNominal

·  Bonding Area: 42 x 42 mils Min.

·  Back Metallization: Gold-3000ÃNominal

·  Junction Passivated with Thermal Silicon Dioxide - Planar Design

·  Backside Available with Solderable Ag Backside as JANHCF or JANKCF

艾睿:
If your circuit needs to adjust from an AC to DC voltage use a switching diode 1N5809 rectifier from Microsemi. This rectifier has an operating temperature range of -65 °C to 175 °C. It is made in a single configuration. Its peak non-repetitive surge current is 125 A, while its maximum continuous forward current is 6 A.

Chip1Stop:
Diode Switching 100V 6A 2-Pin Case E

TME:
Diode: rectifying; THT; 100V; 6A; Package: tape; 30ns; Ifsm:125A

Verical:
Rectifier Diode Switching 100V 6A 30ns 2-Pin Case E Bag

Win Source:
DIODE GEN PURP 100V 3A AXIAL