1N5535B

无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437

• LOW REVERSE LEAKAGE CHARACTERISTICS

• LOW NOISE CHARACTERISTICS

• DOUBLE PLUG CONSTRUCTION

• METALLURGICALLYBONDED

艾睿:
Access the reverse breakdown region using a voltage regulator 1N5535B zener diode from Microsemi. Its test current is 1 mA. This device has a maximum regulator current of 25 mA. Its maximum leakage current is 0.01 μA. Its maximum power dissipation is 500 mW. This zener device has a nominal voltage of 15 V and a voltage tolerance of 5%. It is made in a single configuration. This zener diode has a minimum operating temperature of -65 °C and a maximum of 175 °C.