1N6461

1N6461概述

瞬态抑制器 TRANSIENT SUPPRESSORS

This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors TVS are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak "Standoff" voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration.


艾睿:
Prevent your circuits from experiencing malfunctions from electrostatic discharge with this 1N6461 TVS diode from Microsemi. This device&s;s maximum clamping voltage is 9 V and minimum breakdown voltage is 5.6 V. Its test current is 25 mA. Its peak pulse power dissipation is 500 W. Its maximum leakage current is 3000 μA. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 175 °C.


1N6461中文资料参数规格
技术参数

钳位电压 9 V

测试电流 25 mA

脉冲峰值功率 500 W

最小反向击穿电压 5.6 V

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

引脚数 2

封装 B

外形尺寸

封装 B

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Bag

制造应用 通用

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买1N6461
型号: 1N6461
描述:瞬态抑制器 TRANSIENT SUPPRESSORS
替代型号1N6461
型号/品牌 代替类型 替代型号对比

1N6461

Microsemi 美高森美

当前型号

当前型号

JANTX1N6461

美高森美

完全替代

1N6461和JANTX1N6461的区别

JAN1N6461

美高森美

完全替代

1N6461和JAN1N6461的区别

JANTXV1N6461

美高森美

完全替代

1N6461和JANTXV1N6461的区别

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