1N6464

1N6464图片1
1N6464概述

高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.

This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors TVS are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak "Standoff" voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration.


艾睿:
Protect your electronic equipment from sudden or momentary overvoltage conditions with this 1N6464 TVS diode from Microsemi. Its peak pulse power dissipation is 500 W. Its test current is 5 mA. This device&s;s maximum clamping voltage is 26.5 V and minimum breakdown voltage is 16.4 V. Its maximum leakage current is 500 μA. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 175 °C.


Verical:
TVS Diode Single Uni-Dir 15V 500W 2-Pin Case E Bag


1N6464中文资料参数规格
技术参数

钳位电压 26.5 V

最大反向电压(Vrrm) 15V

测试电流 5 mA

脉冲峰值功率 500 W

最小反向击穿电压 16.4 V

击穿电压 16.4 V

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

引脚数 2

封装 B, Axial

外形尺寸

封装 B, Axial

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Bag

制造应用 通用

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买1N6464
型号: 1N6464
描述:高SUGRE性能为瞬态保护对于大部分关键电路。 HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
替代型号1N6464
型号/品牌 代替类型 替代型号对比

1N6464

Microsemi 美高森美

当前型号

当前型号

JANTX1N6464

美高森美

完全替代

1N6464和JANTX1N6464的区别

JAN1N6464

美高森美

完全替代

1N6464和JAN1N6464的区别

JANTXV1N6464

美高森美

完全替代

1N6464和JANTXV1N6464的区别

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