1EBN1001AE

1EBN1001AE 编带

Summary of Features:

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Single Channel IGBT / MOSFET Gate Driver Booster

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Suitable for IGBT classes up to 650 V / 800A and 1200 V / 400A

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Low propagation delay and minimal PWM distortion

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Separate turn-on and turn-off signals pathes

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Support for negative turn-off bias

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14-pin PG-DSO-14 exposed pad green package

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AEC-Q100 qualified

Benefits:

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Support for active short circuit strategies

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„„Cost effective implementation of ASIL C/D on system level

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„„Significant PCB area savings