1N4106-1

1N4106-1图片1
1N4106-1图片2
1N4106-1概述

Diode Zener Single 12V 5% 0.5W1/2W 2Pin DO-35

1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/435

LOW CURRENT OPERATION AT 250 µ A

LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS

METALLURGICALLY BONDED

MAXIMUM RATINGS

Junction and Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ +50°C

Power Derating: 4 mW / °C above +50°C

Forward Voltage at 200 mA: 1.1 Volts maximum


艾睿:
When your circuit requires a diode to act in the reverse-breakdown region use a voltage regulator 1N4106-1 zener diode from Microsemi. This device has a maximum regulator current of 32 mA. Its test current is 0.25 mA. Its maximum power dissipation is 500 mW. Its maximum leakage current is 0.05 μA. This zener diode has an operating temperature range of -65 °C to 175 °C. This zener device has a nominal voltage of 12 V and a voltage tolerance of 5%. It is made in a single configuration.


TME:
Diode: Zener; 400mW; 12V; Package: tape; DO35; 50nA


1N4106-1中文资料参数规格
技术参数

耗散功率 500 mW

测试电流 0.25 mA

稳压值 12 V

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Through Hole

引脚数 2

封装 DO-35

外形尺寸

封装 DO-35

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

数据手册

在线购买1N4106-1
型号: 1N4106-1
描述:Diode Zener Single 12V 5% 0.5W1/2W 2Pin DO-35
替代型号1N4106-1
型号/品牌 代替类型 替代型号对比

1N4106-1

Microsemi 美高森美

当前型号

当前型号

1N4106D-1

美高森美

完全替代

1N4106-1和1N4106D-1的区别

JAN1N4106-1

美高森美

类似代替

1N4106-1和JAN1N4106-1的区别

JANTXV1N4106-1

美高森美

类似代替

1N4106-1和JANTXV1N4106-1的区别

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