1EDN7512GXTMA1

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1EDN7512GXTMA1概述

MOSFET驱动器, 低压侧, 4.5V至20V电源, 8A输出, 19ns延迟, WSON-6

Description:

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.

 

**1EDN family: Fast, precise, strong and compatible**

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Highly efficient SMPS enabled by 5 ns short slew rates and ± 5 ns propagation delay precision for fast MOSFET and GaN switching
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Separate source and sink outputs simplify the application design
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Industry standard packages and pinout ease system design upgrades

Summary of Features:

1
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*EDN family: The new reference in ruggedness and low power dissipation**
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-10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
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5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages
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Cool driver ICs thanks to true rail-to-rail low impedance output stages
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4V and 8V UVLO Under Voltage Lock Out options for instant MOSFET protection during start-up and under abnormal conditions
1EDN7512GXTMA1中文资料参数规格
技术参数

上升/下降时间 6.5ns, 4.5ns

输出接口数 2

针脚数 6

下降时间Max 4.5 ns

上升时间Max 6.5 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

电源电压 4.5V ~ 20V

电源电压Max 20 V

电源电压Min 4.5 V

封装参数

安装方式 Surface Mount

引脚数 6

封装 PG-WSON-6-1

外形尺寸

封装 PG-WSON-6-1

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Synchronous rectification, Industrial, DC-DC converters, Wireless charging, bricks

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

海关信息

ECCN代码 EAR99

数据手册

在线购买1EDN7512GXTMA1
型号: 1EDN7512GXTMA1
描述:MOSFET驱动器, 低压侧, 4.5V至20V电源, 8A输出, 19ns延迟, WSON-6

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