FAIRCHILD SEMICONDUCTOR 2N7002 晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
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- High density cell design for extremely low RDS ON
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- High saturation current capability
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- Voltage controlled small signal switch
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- Rugged and reliable
额定电压DC 60.0 V
额定电流 115 mA
额定功率 200 mW
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 200 mW
阈值电压 2.1 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 120 mA
输入电容Ciss 50pF @25VVds
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.2 W
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.92 mm
宽度 1.3 mm
高度 0.93 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Motor Drive & Control, Audio
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N7002 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
2N7002MTF 飞兆/仙童 | 类似代替 | 2N7002和2N7002MTF的区别 |
2N7002LT1G 安森美 | 功能相似 | 2N7002和2N7002LT1G的区别 |
2N7002-7-F 美台 | 功能相似 | 2N7002和2N7002-7-F的区别 |