2N7002DW

FAIRCHILD SEMICONDUCTOR  2N7002DW.  场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363

最大源漏极电压VdsDrain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| 115mA/0.115A 源漏极导通电阻RdsDrain-Source On-State Resistance| 2.53Ω@ VGS = 10V,ID = 0.5A 开启电压Vgs（th）Gate-Source Threshold Voltage| 1~2V 耗散功率PdPower Dissipation| 200mW/0.2W Description & Applications| N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant 描述与应用| N沟道增强型场效应 特点 •双N沟道MOSFET •低导通电阻 •低栅极阈值电压 •低输入电容 •开关速度快 •低输入/输出漏 •超小型表面贴装封装 •无铅/ RoHS标准