2SK33720SL

硅结场效应晶体管（小信号）硅N沟道结对于低频率阻抗转换驻极体电容式麦克风特性硅N沟道结在低频率的阻抗变换对于驻极体电容式麦克风高互导GM低噪声电压的NV

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 最大漏极电流Id Drain Current| 2mA 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 耗散功率Pd Power Dissipation| 100mW/0.1W Description & Applications| Silicon Junction FETs Small Signal Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone Features Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone High mutual conductance gm Low noise voltage of NV 描述与应用| 硅结场效应（小信号） 硅N沟道结 对于低频率阻抗转换驻极体电容式麦克风 特性 硅N沟道结 在低频率的阻抗变换 对于驻极体电容式麦克风 高互导GM 低噪声电压的NV