ON SEMICONDUCTOR 2V7002KT1G MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V 新
N 通道 MOSFET,带肖特基二极管,
得捷:
MOSFET N-CH 60V 320MA SOT23
立创商城:
N沟道 60V 320mA N-Channel Small Signal MOSFET 60V, 380mA, 1.6Ω
欧时:
ON Semiconductor Si N沟道 MOSFET 2V7002KT1G, 320 mA, Vds=60 V, 3引脚 SOT-23封装
贸泽:
MOSFET NFET 60V 115MA 7MO
艾睿:
Use ON Semiconductor&s;s 2V7002KT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 420 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
2V7002KT1G N-channel MOSFET Transistor, 0.32 A, 60 V, 3-Pin SOT-23
安富利:
Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 T/R
Verical:
Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 T/R
Newark:
MOSFET, N-CH, 60V, 0.38A, SOT-23
力源芯城:
小信号MOSFET,60V,380mA,N沟道
Win Source:
MOSFET N-CH 60V 320MA SOT-23-3
无卤素状态 Halogen Free
通道数 1
针脚数 3
漏源极电阻 1.19 Ω
极性 N-Channel
耗散功率 420 mW
阈值电压 1 V
漏源极电压Vds 60 V
连续漏极电流Ids 0.32A
上升时间 9 ns
输入电容Ciss 24.5pF @20VVds
额定功率Max 300 mW
下降时间 29 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.04 mm
宽度 1.4 mm
高度 1.01 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2V7002KT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2N7002KT1G 安森美 | 类似代替 | 2V7002KT1G和2N7002KT1G的区别 |
DMN62D0U-13 美台 | 功能相似 | 2V7002KT1G和DMN62D0U-13的区别 |
2N7002BK 恩智浦 | 功能相似 | 2V7002KT1G和2N7002BK的区别 |