ON SEMICONDUCTOR 2SK3557-7-TB-E 晶体管, 射频FET, 15 V, 50 mA, 200 mW, SOT-23
N 通道 JFET,
### JFET
一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
得捷:
RF MOSFET N-CH JFET 5V 3CP
欧时:
ON Semiconductor 2SK3557-7-TB-E N通道 JFET 晶体管, Vds=15 V, Idss: 16 → 32mA, 3引脚 CP封装
立创商城:
N 沟道 JFET,15V,10 至 32mA,35mS,CP
艾睿:
Are you looking for a device with a high input electrical resistance? ON Semiconductor brings you their 2SK3557-7-TB-E JFET transistor. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Allied Electronics:
2SK3557-7-TB-E N-channel JFET Transistor; 15 V; Idss 16 - 32mA; 3-Pin CP
安富利:
Trans JFET N-CH 15V 50mA 3-Pin CP T/R
Chip1Stop:
Trans JFET N-CH 15V 50mA Si 3-Pin CP T/R
Verical:
Trans JFET N-CH 15V 50mA Si Automotive 3-Pin Case CP T/R
Newark:
# ON SEMICONDUCTOR 2SK3557-7-TB-E RF FET Transistor, 15 V, 50 mA, 200 mW, SOT-23
罗切斯特:
Trans JFET N-CH 15V 50mA Si 3-Pin CP T/R
DeviceMart:
MOSFET N-CH 15V 50MA 3CP
Win Source:
JFET N-CH 15V 50MA SOT23
频率 1 kHz
额定电流 50 mA
击穿电压 15.0 V
针脚数 3
极性 N-Channel
耗散功率 200 mW
漏源极电压Vds 15 V
测试电流 1 mA
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
额定电压 15 V
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.5 mm
高度 1.1 mm
封装 SOT-23-3
材质 Silicon
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 AM tuner RF amplifi cation, Low noise amplifier
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2SK3557-7-TB-E ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SK35 三洋 | 功能相似 | 2SK3557-7-TB-E和SK35的区别 |
2SK3557-7 三洋 | 功能相似 | 2SK3557-7-TB-E和2SK3557-7的区别 |