2N5551G

ON SEMICONDUCTOR  2N5551G  单晶体管 双极, 通用, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 100 hFE

The is a small signal high voltage NPN silicon Bipolar Transistor, designed for general purpose switching applications.

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200°C/W Junction-to-ambient thermal resistance

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83.3°C/W Junction-to-case thermal resistance

得捷:
TRANS NPN 160V 0.6A TO92

贸泽:
双极晶体管 - 双极结型晶体管BJT 600mA 180V NPN

e络盟:
单晶体管 双极, 通用, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 100 hFE

艾睿:
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Box

Allied Electronics:
SS T092 RF XSTR NPN 160V -LEAD FREE

安富利:
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk

Chip1Stop:
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk

Verical:
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Box

罗切斯特:
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk

Win Source:
TRANS NPN 160V 0.6A TO-92