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N 通道功率 MOSFET,60V,
### MOSFET ,ON Semiconductor
得捷:
MOSFET N-CH 60V 200MA TO92-3
欧时:
ON Semiconductor Si N沟道 MOSFET 2N7000RLRAG, 200 mA, Vds=60 V, 3引脚 TO-92封装
艾睿:
This 2N7000RLRAG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 350 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MOSFET; N-Ch; VDSS 60VDC; RDSON 5 Ohms; ID 200mA; TO-92 TO-226; PD 350mW; -55degc
Verical:
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin TO-92 T/R
罗切斯特:
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R
力源芯城:
小信号N沟道TO-92-3封装场效应管
Win Source:
MOSFET N-CH 60V 200MA TO-92
额定电压DC 60.0 V
额定电流 200 mA
通道数 1
漏源极电阻 5 Ω
极性 N-Channel
耗散功率 350 mW
阈值电压 3 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 200 mA
输入电容Ciss 60pF @25VVds
额定功率Max 350 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 350mW Tc
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N7000RLRAG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2N7000G 安森美 | 类似代替 | 2N7000RLRAG和2N7000G的区别 |
2N7000RLRA 安森美 | 类似代替 | 2N7000RLRAG和2N7000RLRA的区别 |
2N7000RLRMG 安森美 | 类似代替 | 2N7000RLRAG和2N7000RLRMG的区别 |