2SK208-GRTE85L,F

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2SK208-GRTE85L,F概述

JFET N-Ch SM Sig FET -50V NF 0.5dB -1nA -30V

Due to the very high input electrical resistance, there will be very little voltage-drop in your circuit if you use the JFET transistor from . Its maximum power dissipation is 100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C.

2SK208-GRTE85L,F中文资料参数规格
技术参数

耗散功率 100 mW

击穿电压 50 V

输入电容Ciss 8.2pF @10VVds

额定功率Max 100 mW

工作温度Max 125 ℃

工作温度Min -55 ℃

耗散功率Max 100 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

材质 Silicon

工作温度 125℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买2SK208-GRTE85L,F
型号: 2SK208-GRTE85L,F
制造商: Toshiba 东芝
描述:JFET N-Ch SM Sig FET -50V NF 0.5dB -1nA -30V

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