双极晶体管 - 双极结型晶体管BJT PNP LV High Perf PWR Trans - 80V
Thanks to STMicroelectronics, your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
频率 50 MHz
极性 PNP
耗散功率 1.4 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 2A
最小电流放大倍数hFE 140 @100mA, 2V
额定功率Max 1.4 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1400 mW
安装方式 Surface Mount
引脚数 4
封装 TO-243
封装 TO-243
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2STF2280 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BUL381D 意法半导体 | 功能相似 | 2STF2280和BUL381D的区别 |
BUL89 意法半导体 | 功能相似 | 2STF2280和BUL89的区别 |
BUL138 意法半导体 | 功能相似 | 2STF2280和BUL138的区别 |