低电压高性能NPN功率晶体管 Low voltage high performance NPN power transistors
- 双极 BJT - 单 NPN 50 V 5 A - 1.4 W 表面贴装型 SOT-89-3
得捷:
TRANS NPN 50V 5A SOT89-3
贸泽:
双极晶体管 - 双极结型晶体管BJT LO VLT HI PRM PW TRN
艾睿:
The versatility of this NPN 2STF1550 GP BJT from STMicroelectronics makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 50V 5A 4-Pin3+Tab SOT-89 T/R
Chip1Stop:
Trans GP BJT NPN 50V 5A 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS NPN 50V 5A SOT-89
极性 NPN
耗散功率 1400 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 5A
最小电流放大倍数hFE 135 @2A, 2V
最大电流放大倍数hFE 100 @3A, 2V
额定功率Max 1.4 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1400 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free