SOT-89 NPN 100V 2A
The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 1300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6.5 V.
频率 300 MHz
无卤素状态 Halogen Free
极性 NPN
耗散功率 1.3 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 300 @100mA, 5V
额定功率Max 1.3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1300 mW
安装方式 Surface Mount
引脚数 4
封装 TO-243
封装 TO-243
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2SC6096-TD-H ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2SC6096-TD-E 安森美 | 类似代替 | 2SC6096-TD-H和2SC6096-TD-E的区别 |