2SC5706-H

ON SEMICONDUCTOR  2SC5706-H  Bipolar BJT Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE 新

If your circuit"s specifications require a device that can handle high levels of voltage, "s NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.