2SC6017-TL-E 编带
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 950 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
频率 200 MHz
针脚数 3
极性 N-Channel, NPN
耗散功率 0.95 W
击穿电压集电极-发射极 50 V
最小电流放大倍数hFE 200 @1A, 2V
额定功率Max 950 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 950 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2SC6017-TL-E ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2SC6017-TL-EX 安森美 | 类似代替 | 2SC6017-TL-E和2SC6017-TL-EX的区别 |
2SC6017 安森美 | 功能相似 | 2SC6017-TL-E和2SC6017的区别 |