


TP NPN 50V 5A
- 双极 BJT - 单 NPN 50 V 5 A 180MHz 1 W 通孔 TP
得捷:
TRANS NPN 50V 5A TP
立创商城:
2SD1803S-H
贸泽:
Bipolar Transistors - BJT BIP NPN 5A 50V
艾睿:
Implement this versatile NPN 2SD1803S-H GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN 50V 5A 3-Pin3+Tab TP Bag
Chip1Stop:
Trans GP BJT NPN 50V 5A 3-Pin3+Tab TP Bag
Verical:
Trans GP BJT NPN 50V 5A 1000mW 3-Pin3+Tab IPAK Bag
频率 180 MHz
无卤素状态 Halogen Free
极性 NPN
耗散功率 1 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 5A
最小电流放大倍数hFE 140 @500mA, 2V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
封装 TO-251-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free