2SC5706-E

双极型晶体管（ - ） 50V ，（ - ） 5A，低VCE （饱和），（ PNP）的NPN单TP / TP -FA Bipolar Transistor -50V, -5A, Low VCEsat, PNPNPN Single TP/TP-FA

The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.