2N6036

STMICROELECTRONICS  2N6036  单晶体管 双极, 达林顿, NPN, 80 V, 40 W, 4 A, 750 hFE

Compared to other transistors, the PNP Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@4mA@4A V. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.