STMICROELECTRONICS 2N6111 单晶体管 双极, 通用, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE
- 双极 BJT - 单 PNP 30 V 7 A 4MHz 40 W 通孔 TO-220AB
得捷:
TRANS PNP 30V 7A TO220
艾睿:
This specially engineered PNP 2N6111 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
富昌:
2N6111 系列 40 V 7 A 通孔 硅PNP开关晶体管 - TO-220-3
Verical:
Trans GP BJT PNP 30V 7A 3-Pin3+Tab TO-220 Tube
Newark:
Bipolar BJT Single Transistor, General Purpose, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE
频率 4 MHz
额定电压DC -40.0 V
额定电流 -7.00 A
针脚数 3
极性 PNP, P-Channel
耗散功率 40 W
击穿电压集电极-发射极 30 V
最小电流放大倍数hFE 30 @3A, 4V
最大电流放大倍数hFE 150
额定功率Max 40 W
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 40000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2N6111 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
2N6111G 安森美 | 功能相似 | 2N6111和2N6111G的区别 |
D45H2A 飞兆/仙童 | 功能相似 | 2N6111和D45H2A的区别 |
2N6111LEADFREE Central Semiconductor | 功能相似 | 2N6111和2N6111LEADFREE的区别 |