2STW4468

高功率NPN外延平面型双极晶体管 High power NPN epitaxial planar bipolar transistor

- 双极 BJT - 单

得捷:
TRANS NPN 140V 10A TO247-3

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2STW4468 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT NPN 140V 10A 3-Pin3+Tab TO-247 Tube

TME:
Transistor: bipolar, NPN; 140V; 10A; 100W; TO247