STMICROELECTRONICS 2ST2121 单晶体管 双极, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE
Bipolar BJT Transistor PNP 250V 17A 25MHz 250W Chassis Mount TO-3
得捷:
TRANS PNP 250V 17A TO3
e络盟:
单晶体管 双极, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE
艾睿:
Compared to other transistors, the PNP 2ST2121 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250000 mW. The component will be shipped in tray format. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 6 V.
Chip1Stop:
Trans GP BJT PNP 250V 17A 3-Pin2+Tab TO-3 Tray
Verical:
Trans GP BJT PNP 250V 17A 3-Pin2+Tab TO-3 Tray
频率 25 MHz
针脚数 2
极性 PNP
耗散功率 250 W
击穿电压集电极-发射极 250 V
最小电流放大倍数hFE 80 @1A, 5V
额定功率Max 250 W
直流电流增益hFE 80
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 250000 mW
安装方式 Through Hole
引脚数 2
封装 TO-3
封装 TO-3
工作温度 200℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tray
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2ST2121 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MJ21193G 安森美 | 功能相似 | 2ST2121和MJ21193G的区别 |