NPN硅低功率晶体管 NPN SILICON LOW POWER TRANSISTOR
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N2484 Microsemi 美高森美 | 当前型号 | 当前型号 |
JAN2N2484 美高森美 | 完全替代 | 2N2484和JAN2N2484的区别 |
JANTX2N2484 美高森美 | 完全替代 | 2N2484和JANTX2N2484的区别 |
JANS2N2484 美高森美 | 完全替代 | 2N2484和JANS2N2484的区别 |