2STA2121

高功率PNP外延平面型双极晶体管 High power PNP epitaxial planar bipolar transistor

Bipolar BJT Transistor PNP 250V 17A 25MHz 220W Through Hole TO-264

得捷:
TRANS PNP 250V 17A TO264

贸泽:
双极晶体管 - 双极结型晶体管BJT PNP Power Transistor

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP 2STA2121 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 220000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube

TME:
Transistor: PNP; bipolar; 250V; 17A; 220W; TO264

Verical:
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube

Win Source:
TRANS PNP 250V 17A TO264 / Bipolar BJT Transistor PNP 250 V 17 A 25MHz 220 W Through Hole TO-264