2SK1317-01-E

2SK1317-01-E图片1
2SK1317-01-E图片2
2SK1317-01-E概述

TO-3P N-CH 1500V 2.5A

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Renesas" power MOSFET can provide a solution. Its maximum power dissipation is 100000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Renesas&s; 2SK1317-01-E power MOSFET can provide a solution. Its maximum power dissipation is 100000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin3+Tab TO-3P


Verical:
Trans MOSFET N-CH Si 1.5KV 2.5A 3-Pin3+Tab TO-3P


2SK1317-01-E中文资料参数规格
技术参数

极性 N-CH

耗散功率 100 W

漏源极电压Vds 1500 V

连续漏极电流Ids 2.5A

上升时间 70 ns

输入电容Ciss 990pF @10VVds

下降时间 60 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 100000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

物理参数

材质 Silicon

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买2SK1317-01-E
型号: 2SK1317-01-E
制造商: Renesas Electronics 瑞萨电子
描述:TO-3P N-CH 1500V 2.5A

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