NPN双极型晶体管 NPN BIPOLAR TRANSISTOR
Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2N3501 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N3501 美高森美 | 完全替代 | 2N3501和JANTX2N3501的区别 |
JAN2N3501 美高森美 | 完全替代 | 2N3501和JAN2N3501的区别 |
JANTXV2N3501 美高森美 | 完全替代 | 2N3501和JANTXV2N3501的区别 |