Power Bipolar Transistor, 10A IC, 80V VBRCEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N3716 Central Semiconductor | 当前型号 | 当前型号 |
2N3714 NTE Electronics | 类似代替 | 2N3716和2N3714的区别 |
JANTX2N3716 美高森美 | 功能相似 | 2N3716和JANTX2N3716的区别 |
JAN2N3715 美高森美 | 功能相似 | 2N3716和JAN2N3715的区别 |