INTERNATIONAL RECTIFIER 2N6849 晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
The is a -100V single P-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to "s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves very low on-state resistance combined with high transconductance. The IRFF9130 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
ESD sensitive device, take proper precaution while handling the device.
针脚数 3
漏源极电阻 300 mΩ
极性 P-Channel
耗散功率 25 W
产品系列 IRFF9130
漏源极电压Vds -100 V
漏源击穿电压 -100 V
连续漏极电流Ids -6.50 A
工作温度Max 150 ℃
安装方式 Through Hole
引脚数 3
封装 TO-205
脚长度 14.2 mm
封装 TO-205
重量 2.40 g
产品生命周期 Active
包装方式 Bulk
制造应用 Power Management, Industrial, 电源管理, 电机驱动与控制, 音频, 国防, 军用与航空, Motor Drive & Control, 工业, Audio, Aerospace, Defence, Military
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
ECCN代码 EAR99